TY - JOUR
T1 - Side-dependent electron escape from graphene- and graphane-like SiC layers
JF - Applied Physics Letters
Y1 - 2012
A1 - Gori, Paola
A1 - Pulci, O.
A1 - Marsili, Margherita
A1 - Bechstedt, F.
KW - density functional theory
KW - electron affinity
KW - electronic structure
KW - graphene
KW - hydrogenation
KW - ionisation potential
KW - MBPT
KW - nanostructured materials
KW - perturbation theory
KW - silicon
KW - silicon compounds
AB - The structural and electronic properties of SiC-based two-dimensional (2D) crystals are studied by means of density functional theory and many-body perturbation theory. Such properties cannot simply be interpolated between graphene and silicene. The replacement of half of the C atoms by Si atoms opens a large direct electronic gap and destroys the Dirac cones. Hydrogenation further opens the gap and significantly reduces the electron affinity to 0.1 or 1.8 eV in dependence on the carbon or silicon termination of the 2D crystal surface, thus showing a unique direction dependent ionization potential. This suggests the use of 2D-SiC:H as electron or hole filter.
PB - AIP
VL - 100
UR - http://dx.doi.org/10.1063/1.3679175
CP - 4
U3 - UP216
ER -