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Coexistence of Negatively and Positively Buckled Isomers on n(+)-Doped Si(111) - 2 x 1

TitleCoexistence of Negatively and Positively Buckled Isomers on n(+)-Doped Si(111) - 2 x 1
Publication TypeJournal Article
Year of Publication2011
AuthorsBussetti, G., Bonanni B., Cirilli S., Violante A., Russo M., Goletti C., Chiaradia P., Pulci O., Palummo M., Del Sole R., Gargiani P., Betti M. G., Mariani C., Feenstra R. M., Meyer G., & Rieder K. H.
Keywordselemental semiconductors; energy gap; scanning tunnelling microscopy; semiconductor doping; silicon; surface reconstruction; surface states; ultraviolet photoelectron spectra
Abstract

A long-standing puzzle regarding the Si(111)-2×1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photoemission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.

JournalPHYSICAL REVIEW LETTERS
Volume106
Pagination067601
DOI10.1103/PhysRevLett.106.067601
Date Published2011/02
Citation Key1267