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Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

TitleDefects and strain enhancements of second-harmonic generation in Si/Ge superlattices
Publication TypeJournal Article
Year of Publication2014
AuthorsBertocchi, M., Luppi E., Degoli E., Veniard V., & Ossicini S.
Keywords(SI)N/(GE)N SUPERLATTICES; EXCITATIONS; GREENS-FUNCTION; interfaces; LAYER SUPERLATTICES; ODD-PERIOD; OPTICAL-TRANSITIONS; SEMICONDUCTOR
Abstract

Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.

JournalJOURNAL OF CHEMICAL PHYSICS
Volume140
Pagination214705
DOI10.1063/1.4880756
Citation Key ISI:000337108900053